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Tokuyasu, Kayoko; Yasue, Kenichi; Komatsu, Tetsuya; Tamura, Itoko; Horiuchi, Yasuharu
QST-M-2; QST Takasaki Annual Report 2015, P. 189, 2017/03
Understanding the stage of mountain building is crucial to the stability assessment of geological environments in geological disposal system. In this context, we have carried out the research and development of provenance analysis techniques to elucidate the mountain-building stage. Here we present the results focusing on the R&D using the Electron Spin Resonance (ESR) signals from quartz in sediments and their basement rocks.
Oshima, Takeshi; Morishita, Norio; Kamiya, Tomihiro; Isoya, Junichi*; Baba, Shinichi; Aihara, Jun; Yamaji, Masatoshi*; Ishihara, Masahiro
Proceedings of OECD/NEA 3rd Information Exchange Meeting on Basic Studies in the Field of High Temperature Engineering (OECD/NEA No.5309), p.197 - 202, 2004/00
For the application of SiC to electronic devices, it is necessary to develop the fabrication technique of high quality SiC substrates with uniform carrier concentration. Since phosphorus (P) atoms become shallow donors in SiC, nuclear transmutation doping (NTD) is thought to be a good method for the fabrication of n-type SiC substrates with uniform electron concentration. However, defects are also introduced in SiC by neutron irradiation. Although thermal annealing at high temperatures above 1500C is carried out to remove defects after irradiation, heavy damage in SiC is hard to recover. Therefore, the process for the reduction of defects in SiC irradiated with neutrons is necessary to develop. In this study, neutron irradiation into SiC at elevated temperature was carried out to decrease radiation damage. The electrical properties of the samples are studied using Hall effect measurement. Furthermore, to establish the measurement technique for the estimation of P atoms created in SiC by NTD, P atoms in SiC were investigated using Electron Spin Resonance (ESR).
Idesaki, Akira*; Narisawa, Masaki*; Okamura, Kiyohito*; Sugimoto, Masaki; Morita, Yosuke; Seguchi, Tadao; Ito, Masayoshi*
Proceedings of International Symposium on Prospect for Application of Radiation towards the 21st Century, p.139 - 140, 2000/03
no abstracts in English
D.Cha*; Ito, Hisayoshi; Morishita, Norio; Kawasuso, Atsuo; Oshima, Takeshi; ; J.Ko*; K.Lee*; Nashiyama, Isamu
Mater. Sci. Forum, 264-268, p.615 - 618, 1998/00
no abstracts in English